Source: Vishay Author: Vishay
    Super-junction devices support high rated power and high density, while reducing conduction and switching losses, thereby enhancing efficiency
    MALVERN, Pennsylvania, USA; Shanghai, China - April 16, 2025 - Recently, Vishay Intertechnology, Inc. (NYSE stock code:) VSH announced the launch of the new Gen 4.5 650 V E series power MOSFET- SiHK050N65E, providing high efficiency and high power density for communication, industrial and computing applications. Compared with the previous generation of devices, the on-resistance of Vishay Siliconix N-channel SiHK050N65E has decreased by 48.2%, while the product of resistance and gate charge (an important factor of merit (FOM) for 650V MOSFETs in power conversion applications) has decreased by 65.4%.

    Vishay has launched a variety of MOSFET technologies to support all stages of the power conversion process, including from high-voltage input to low-voltage output required by the latest high-tech devices. With other devices in the SiHK050N65E and Gen 4.5 650 V E series, the company is meeting the demands for improved efficiency and power density in two early stages of the power system architecture, namely power Factor Correction (PFC) and the subsequent DC/DC converter module. Typical applications include servers, edge computing and supercomputers; UPS, high-intensity discharge (HID) lamps and fluorescent lamp ballasts; Communication Switching Mode Power Supply (SMPS) Solar inverter Welding equipment Induction heating system Electric drive and battery charger.
    The SiHK050N65E is based on Vishay's latest high-efficiency E series super-junction technology and can achieve a typical low on-resistance of 0.048 Ω at 10V, making it suitable for high-power applications exceeding 6kW. Meanwhile, the breakdown voltage of the 650 V device reaches an additional 50 V, enabling it to operate stably within an input voltage range of 200 VAC to 277 VAC and complying with the Open Rack V3 (ORV3) standard of the Open Computing Project. Furthermore, the ultra-low gate charge of the MOSFET is only 78 nC, providing an excellent FOM value of 3.74? This is crucial for reducing conduction and switching losses, thereby further saving energy and enhancing efficiency. This enables the device to meet the specific titanium efficiency requirements in the server power supply or achieve a peak efficiency of 96%.
    To optimize switching performance in hard-switching topologies such as PFC circuits and dual-switching feedforward designs, the recently released MOSFETs feature relatively low effective output capacitance values, with Co(er) at 167 pF and Co(tr) at 1119 pF. The device has reached an industry low of 8.0 in the FOM of resistance multiplied by Co(er)? "pF." SiHK050N65E with PowerPAK? It is available in a 10 x 12 package form and is equipped with a Kelvin connection to reduce gate noise while enhancing the immunity of dv/dt. The MOSFET complies with the RoHS standard and is halogen-free. It is specially designed to withstand overvoltage transients in avalanche mode, and 100% UIS testing ensures its limit value.
    Samples of SiHK050N65E are now available and mass production has been achieved. For information on the supply cycle, please contact your local sales office.

Introduction to VISHAY
    Vishay is one of the world's largest manufacturers of discrete semiconductor and passive electronic component series products, which are crucial for innovative designs in the automotive, industrial, computing, consumer, communication, aerospace and medical markets. Serving global customers, Vishay carries The gene of technology - The DNA of tech. . Vishay Intertechnology, Inc. is a Fortune 1,000 company listed on the New York Stock Exchange (VSH).