Source: GigaDevice Author: GigaDevice
    Beijing, China (April 15, 2025) - GigaDevice (stock code: 603986), a leading semiconductor device supplier in the industry, announced the launch of the GD5F1GM9 series of high-speed QSPI NAND Flash, which features breakthrough read speeds and innovative bad block management (BBM) capabilities. It can effectively solve the industry pain points of the traditional SPI NAND Flash, such as slow response speed and vulnerability to interference from bad blocks. As a new solution that ingeniously combines the high-speed reading advantages of NOR Flash with the large-capacity and low-cost advantages of NAND Flash, the launch of the GD5F1GM9 series will bring new development opportunities to SPI NAND Flash and become an ideal choice for fast-start application scenarios such as security, industry, and IoT.

    The GD5F1GM9 series of high-speed QSPI NAND Flash adopts a 24nm process node and supports built-in 8-bit ECC and two operating voltages of 3V and 1.8V. As well as various high-speed reading modes such as Continuous Read, Cache Read, and Auto Load Next Page, providing users with multiple combination design schemes. Compared with the traditional SPI NAND Flash, the GD5F1GM9 series abandons the original serial computing method in the ECC design and realizes the parallel computing of complex ECC algorithms, which greatly shortens the computing time of the built-in ECC. The maximum clock frequency of this series of 3V products is 166MHz, and the Continuous reading rate can reach 83MB/s in the Continuous Read mode. The maximum clock frequency of the 1.8V product is 133MHz, and it can achieve a Continuous reading rate of 66MB/s in the Continuous Read mode. This means that at the same frequency, the reading speed of the GD5F1GM9 series can reach 2 to 3 times that of traditional SPI NAND products. This design advantage can effectively improve the data access efficiency of the device, significantly shorten the system startup time, and further reduce the system power consumption.
    To solve the problem of bad blocks in traditional NAND Flash, the GD5F1GM9 series has introduced an advanced bad Block Management (BBM) function. This function allows users to effectively deal with the challenges of factory bad blocks and new bad blocks added during use by changing the mapping relationship between physical block addresses and logical block addresses. On the one hand, traditional NAND Flash may have randomly distributed bad blocks when leaving the factory. If these bad blocks appear in the front code area, it will cause the NAND Flash to fail to be used normally. The GD5F1GM9 series, through the Bad Block Management (BBM) function, can ensure that the first 256 blocks are all factory good blocks, thereby guaranteeing the stability of the code area. On the other hand, during the usage process, new bad blocks may occur in NAND Flash. Traditional solutions require reserving a large number of redundant blocks for the replacement of bad blocks in different partitions, resulting in serious waste of resources. The Bad Block Management (BBM) function of the GD5F1GM9 series enables users to remap logical and physical addresses, making damaged bad block addresses available again. It only needs to reserve a minimum number of redundant blocks. This function not only significantly improves resource utilization but also effectively simplifies system design.
   "At present, the reading speed of SPI NAND Flash is generally slow, which has become an important bottleneck restricting the performance improvement of terminal products," said Su Ruwei, vice president of GigaDevice and general manager of the Storage Division. "The launch of the GD5F1GM9 series of high-speed QSPI NAND Flash has set a new performance benchmark in the market. This series not only effectively compensates for the deficiency of traditional SPI NAND Flash in reading speed, but also provides a new solution for bad block management. It can become an ideal alternative choice for NOR Flash users under the demand for capacity expansion. In the future, GigaDevice will continue to refine its underlying technologies to provide customers with more efficient and reliable storage solutions.
    Currently, GigaDevice's GD5F1GM9 series offers a capacity of 1Gb and two voltage options of 3V/1.8V, and supports package options such as WSON8 8x6mm, WSON8 6x5mm, and BGA24 (5x5ball array) 5x5ball. For detailed information and product pricing, please contact your local sales representative.

About GigaDevice
    Gigadevice Technology Group Co., LTD. (stock code: 603986) is a leading global Fabless chip supplier. Founded in April 2005, the company is headquartered in Beijing, China, and has branches in many countries and regions around the world. Its marketing network covers the globe, providing high-quality and convenient localized support services. Gigadevice is committed to building a complete ecosystem driven by memory, microcontrollers, sensors, and analog products, providing comprehensive product technologies and services for customers in the industrial, automotive, computing, consumer electronics, Internet of Things, mobile application, and communication fields. It has passed the ASIL D system certification of the highest level of automotive functional safety ISO26262:2018, and has obtained the IEC 61508 functional safety product certification, as well as system certifications such as ISO 9001, ISO 14001, ISO 45001, and Dun & Bradstreet certification. Meanwhile, the company has established strategic partnerships with many world-renowned wafer fabrication plants and packaging and testing factories to jointly promote technological innovation in the semiconductor field.