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Zhaoyi Innovation launched GD25NE series SPI NOR Flash: designed for 1.2V SoC, dual-voltage power assisted reading power consumption halved
Date:June 10, 2025    Views:79

Source: Zhaoyi Innovation Author: Zhaoyi Innovation
    Beijing, China (March 12, 2025) -- GigaDevice Innovation (stock code 603986), a leading semiconductor device supplier, announced the launch of the GD25NE series of dual-voltage powered SPI NOR Flash products designed for 1.2V SoC applications. This series of products can be seamlessly compatible with the next generation 1.2V SOCs without the need for an external boost circuit, and this product will further strengthen Zhaoyi Innovation's strategic positioning in the field of dual-voltage powered flash memory solutions. With higher performance and lower power consumption, the GD25NE series fully meets the growing market demand for advanced embedded storage solutions, becoming the ideal choice for smart wearables, healthcare, iot, data center and edge AI applications.

    The core power supply voltage of GD25NE series SPI NOR Flash is 1.8V, and the IO interface voltage is 1.2V. It supports single channel, dual channel, four channel, and dual four-channel mode. The maximum clock frequency is STR 133MHz and DTR 104MHz. The GD25NE series has a typical write time of 0.15ms and a sector erase time of 30ms, which improves data read performance by 20%, write speed by 60%, and erase time by 30% compared to conventional 1.2V single-voltage powered Flash solutions. With these technical advantages, the GD25NE series is an excellent choice for emerging embedded applications.
    To further meet the needs of energy-sensitive applications, the GD25NE series features an ultra-low power design. Its deep sleep power consumption current is as low as 0.2μA, the read current is as low as 9mA at the dual four-channel 104MHz frequency, and the erase current is as low as 8mA. The GD25NE series' 1.2V IO interface design reduces power consumption by 50% compared to traditional 1.8V Flash solutions. This optimized power architecture not only significantly improves energy efficiency, but also maintains the high performance of Flash devices while simplifying SoC system design.
    "The GD25NE series, as a representative of the dual power SPI NOR Flash category, achieves a perfect balance of high performance and ultra-low power consumption," Su Ruwei, vice President of Innovation and general manager of the Storage Division of Zhaoyi, said, "With significantly reduced power consumption, faster read speeds and higher erase efficiency, the GD25NE series can meet the continuous evolution of the new generation of 1.2V SoCs. In the future, Zhaoyi Innovation will continue to expand the product portfolio of dual power SPI NOR Flash, and is committed to providing customers with more efficient, more reliable and more cutting-edge flash memory solutions to help the development of innovative applications."
    Currently, the Mega Innovation GD25NE series is available in a wide range of capacity options from 32Mb to 256Mb, with support for SOP16 (300 mil) and BGA24 (5×5 ball array) package options. The first product in the series, the 256Mb GD25NE256H, is now available for demo. The rest of the 32Mb to 128Mb capacity products will also be introduced. For more information and pricing, please contact your local sales representative.



About Zhaoyi Innovation (GigaDevice)
    Zhaoyi Innovation Technology Group Co., LTD. (Stock code 603986) is the world's leading Fabless chip supplier. Founded in April 2005, the company is headquartered in Beijing, China, with branches in many countries and regions around the world and a global marketing network to provide high-quality and convenient local support services. Zhaoyi Innovation is committed to building a complete ecosystem with memory, microcontrollers, sensors and analog products as the core driving force, and provides customers with perfect product technologies and services in the fields of industry, automotive, computing, consumer electronics, Internet of Things, mobile applications and communications. It has passed ISO26262:2018 ASIL D system certification, the highest level of automotive functional safety, and obtained IEC 61508 functional safety product certification, ISO 9001, ISO 14001, ISO 45001 system certification and Dun & Bradstreet certification. At the same time, the company has established strategic partnerships with a number of world-renowned fabs, packaging and testing plants to jointly promote technological innovation in the semiconductor field.






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