PE7150M概述：
PE7150M是VDS=-18V,ID=-50A，RDS(ON)<6.3mΩ，@VGS=-4.5V，RDS(ON)<7.0mΩ，@VGS=-3.8V，RDS(ON)< 8.1mΩ，@VGS=-3.1V，RDS(ON)<9.0mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
PE7150M的丝印是PE7150M.PE7150M提供PDFN3.3*3.3-8L封装.
PE7150M的丝印是PE7150M.PE7150M提供PDFN3.3*3.3-8L封装.
The PE7150M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE7150M特性：
PE7150M特性：
VDS = -18V, ID = -50A
RDS(ON) < 6.3mΩ @ VGS=-4.5V
RDS(ON) < 7.0mΩ @ VGS=-3.8V
RDS(ON) < 8.1mΩ @ VGS=-3.1V
RDS(ON) < 9.0mΩ @VGS=-2.5V
High Power and current handing capability
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Good stability and uniformity with high EAS
PE7150M应用：
PWM applications
Load switch
Power management
Battery protection
PE7150M典型应用及引脚：
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