PE7190G概述：
PE7190G是VDS=-18V,ID=-90A，RDS(ON)<2.4mΩ，@VGS=-4.5V，RDS(ON)<3.5mΩ，@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
PE7190G的丝印是PE7190G.PE7190G提供DFN5x6-8L封装.
PE7190G的丝印是PE7190G.PE7190G提供DFN5x6-8L封装.
The PE7190G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE7190G特性：
VDS = -18V, ID = -90A
RDS(ON) < 2.4mΩ @ VGS=-4.5V
RDS(ON) < 3.5mΩ @ VGS=-2.5V
High Power and current handing capability
Good stability and uniformity with high EAS
Surface Mount Package
PE7190G应用：
PWM applications
Load switch
Power management
Battery Protection
PE7190G典型应用及引脚：
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