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PE8330M是VDS=30V，ID=30A，RDS(ON)<11mΩ@VGS=10V，RDS(ON)<18mΩ@VGS=4.5V的N沟道MOSFET。
PE8330M的丝印是PE8330M，PE8330M提供PDFN3.3x3.3-8L封装。

The PE8330M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8330M概述：

PE8330M是VDS=30V，ID=30A，RDS(ON)<11mΩ@VGS=10V，RDS(ON)<18mΩ@VGS=4.5V的N沟道MOSFET。
PE8330M的丝印是PE8330M，PE8330M提供PDFN3.3x3.3-8L封装。

The PE8330M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8330M特性：

VDS = 30V, ID = 30A

RDS(ON) < 11mΩ @ VGS=10V

RDS(ON) < 18mΩ @VGS=4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE8330M应用：

PWM applications

Load switch

PE8330M典型应用及引脚：