CST50N10 Description/描述:
CST50N10是BVDSS=100V,RDSON=18mΩ,ID=50A的N沟道快速切换Mosfets。提供TO-252封装。
The CST50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The CST50N10 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
CST50N10 Features/特性:
Super Low Gate Charge
Green Device Available
Excellent Cdv/dt effect decline
Advanced high cell density Trench technology
CST50N10 Product Summary/产品概览:
BVDSS
|
RDSON
|
ID
|
100V |
18mΩ |
50A |
CST50N10 TO252 Pin Configuration/引脚配置:
CST50N10 Package Mechanical Data TO-252/包装机械数据TO-252:
CST50N10 Reel Spectification-TO-252-4R/卷盘规格-TO-252-4R: