CST60N02 Description:
CST60N02是BVDSS/20V,RDSON=4.7mΩ,ID=60A的N沟道Mosfet,提供TO252-4R封装.
CST60N02是BVDSS/20V,RDSON=4.7mΩ,ID=60A的N沟道Mosfet,提供TO252-4R封装.
The CST60N02 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck
converter applications.
The CST60N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
CST60N02 Features
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trenchtechnology
CST60N02 Product Summary
BVDSS
|
RDSON
|
ID
|
20V
|
4.7 mΩ
|
60A
|
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CST60N02 Package M echanical Data TO 252 4R
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CST60N02 Reel Spectification-TO-252-4R
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