MXD3080K Description：
MXD3080K是VDS=30V, ID=80A,RDS(ON)(Typ.)=3.7mΩ@VGS=10V,RDS(ON)(Typ.)=6mΩ@VGS=4.5V的N沟道MOS，提供TO252封装。丝印：3080K
MXD3080K是VDS=30V, ID=80A,RDS(ON)(Typ.)=3.7mΩ@VGS=10V,RDS(ON)(Typ.)=6mΩ@VGS=4.5V的N沟道MOS，提供TO252封装。丝印：3080K
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
MXD3080K Features：
VDS=30V, ID=80A
RDS(ON)(Typ.)=3.7mΩ@VGS=10V
RDS(ON)(Typ.)=6mΩ@VGS=4.5V
Improved dv/dt capability
100% EAS Guaranteed
Fast switching
MXD3080K Application：
NB / VGA / VCORE
POL Applications
SMPS 2nd SR
MXD3080K Pinout：
MXD3080K Ordering Information：
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Part Number
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StorageTemperature
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Package
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Devices Per Reel
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MXD3080K
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-55°C to 150°C
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TO-252
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-
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