MXD6888K概述：
MXD6888K是VDS=60V,ID=80A，RDS(ON)(Typ.)=6.8mΩ@VGS=10V的N沟道MOSFET.MXD6888K的丝印是6888K.MXD6888K提供TO-252-2L封装。
The MXD6888K is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
MXD6888K特性：
VDS=60V, ID=80A
RDS(ON)(Typ.)=6.8mΩ @ VGS=10V
Special Designed for E-Bike Controller Application
Ultra Low On-Resistance
High UIS and UIS 100% Test
MXD6888K应用：
Power Switching Application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
MXD6888K典型应用及引脚图：
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