HYG013N03LS1C2是VDS=30V,ID=150A，RDS(ON)=1.3mΩ(typ.)@VGS=10V,RDS(ON)=2.0mΩ(typ.)@VGS=4.5V的N沟道MOSFET.
HYG013N03LS1C2提供PDFN5*6-8L封装.
HYG013N03LS1C2特性：
VDS=30V,ID=150A
RDS(ON)=1.3mΩ(typ.)@VGS=10V
RDS(ON)=2.0mΩ(typ.)@VGS=4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen- Free Devices Available
HYG013N03LS1C2应用：
Switching Application
Power Management for DC/DC
Battery Protection
HYG013N03LS1C2典型应用电路及封装图：
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