PE6986E是VDS=18V,ID=6.5A，RDS(ON)<15mΩ，@VGS=4.5V，RDS(ON)<16mΩ，@VGS=3.8V，RDS(ON)<20mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET
    PE6986E的丝印是6986E.PE6986E提供SOT-23-6L封装.

    The PE6986E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

PE6986E特性：

VDS = 18V, ID = 6.5A

RDS(ON) < 15mΩ @ VGS=4.5V

RDS(ON) < 16mΩ @VGS=3.8V

RDS(ON) < 20mΩ @VGS=2.5V

ESD Rating: 4000V HBM

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE6986E应用：

Battery Protections

Load switch