PE8209HN概述：
PE8209HN是VDS=18V,ID=9A，RDS(ON)<11mΩ，@VGS=4.5V，RDS(ON)<12mΩ，@VGS=3.8V，RDS(ON)<14mΩ，@VGS=3.1V RDS(ON)<16mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
PE8209HN的丝印是8209.PE8209HN提供DFN2x3-6L封装.
PE8209HN的丝印是8209.PE8209HN提供DFN2x3-6L封装.
The PE8209HN uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PE8209HN特性：
VDS = 18V, ID = 9A
RDS(ON) < 11mΩ @VGS=4.5V
RDS(ON) < 12mΩ@VGS=3.8V
RDS(ON) < 14mΩ @VGS=3.1V
RDS(ON) < 16mΩ@VGS=2.5V
ESD Rating: 4000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE8209HN应用：
PWM applications
Load switch
Power management
PE8209HN典型应用及引脚：
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