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PE8312F是VDS=30V，ID=12A，RDS(ON)<7mΩ@VGS=10V，RDS(ON)<14.5mΩ@VGS=4.5V的N沟道MOSFET。
PE8312F的丝印是8312。PE8312F提供UDFN2x2-6L封装。

The PE8312F uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8312F概述：

PE8312F是VDS=30V，ID=12A，RDS(ON)<7mΩ@VGS=10V，RDS(ON)<14.5mΩ@VGS=4.5V的N沟道MOSFET。
PE8312F的丝印是8312。PE8312F提供UDFN2x2-6L封装。

The PE8312F uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8312F特性：

VDS = 30V, ID = 12A

RDS(ON) < 7mΩ @ VGS=10V

RDS(ON) < 14.5mΩ@VGS=4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE8312F应用：

PWM applications

Load switch

Power management

Battery Protection

PE8312F典型应用及引脚：