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Toshiba introduces SiC MOSFET gate driven photocouplers with enhanced safety features for industrial equipment
Date:June 1, 2025    Views:40

Source: Toshiba Author: Toshiba
    Shanghai, China, March 6, 2025 - Toshiba Electronic Components & Storage Corporation (" Toshiba ") today announced the launch of the "TLP5814H", a new gate-driven photocoupler that can be used to drive silicon carbide (SiC) MOSFETs. The device has an output current of + 6.8A / -4.8A, is available in A small SO8L package and offers active Miller clamping. Starting today to support bulk delivery.



    In a circuit such as an inverter that uses MOSFETs or IGBTs in series, when the lower bridge arm [2] is closed, the Miller current [1] may generate a gate voltage, which in turn can cause faults such as short circuits in the upper and lower bridge arms [3]. Common protection measures are to apply a negative voltage to the grid while it is closed.
    Some SiC MosFETs have higher voltage, lower on-resistance, and faster switching characteristics than silicon (Si) MOSFETs, but not enough negative voltage may be applied between the gate and source. In this case, the application of an active Miller clamp circuit allows the Miller current to flow from the gate to the ground, preventing short circuits without the need to apply a negative voltage. However, due to its partially cost-cutting design, it reduces the negative voltage applied to the grid when the IGBT is turned off. And in this case, a gate driver with an active Miller clamp built in is an option to consider.
     The TLP5814H has an active Miller clamp circuit built in, so there is no need to provide additional power for negative voltage and external active Miller clamp circuits. This not only provides safety features to the system, but also helps minimize the system by reducing external circuitry. Active Miller clamp circuits have a typical on-resistance value of 0.69Ω and a peak clamp feed current rating of 6.8A, making them ideal as gate drivers for SiC MOSFETs, which are very sensitive to gate voltage changes.
    The TLP5814H achieves a rated operating temperature of -40 °C to 125 °C by enhancing the light output of the input infrared emitting diode and optimizing the design of the photoelectric detection device (photodiode array), which improves the optical coupling efficiency. Therefore, it is very suitable for industrial equipment with strict thermal management, such as photovoltaic (PV) inverters and uninterruptible power supplies (UPS). In addition, its transmission delay time and transmission delay deviation are also specified within the range of operating temperature ratings. Its small SO8L package of 5.85 mm x 10 mm x 2.1 mm (typical values) helps to improve the component layout flexibility of the system board. In addition, it supports a minimum creepage distance of 8.0 mm, which in turn allows it to be used in applications requiring high insulation performance.
    In the future, Toshiba will continue to develop optocoupler products to help enhance the safety features of industrial equipment.


Applications:
    Industrial equipment
    - Photovoltaic inverters, UPS, industrial inverters and AC servo drives

Features:
    - Built-in active Miller clamping function
    - Rated peak output current: IOP = + 6.8A / -4.8A
    - High operating temperature rating: Topr (maximum) = 125 °C


Main specifications:

Note:
    [1] Miller current: The current generated when a high dv/dt voltage is applied to the capacitor between the drain and gate of a MOSFET or the capacitor between the collector and gate of an IGBT.
    [2] The lower arm is a component that absorbs current from the load of the circuit using the power supply device, such as an inverter in series to the negative (or grounded) end of the power supply, while the upper arm is a component that provides current from the power supply to the load.
    [3] Short circuit of upper and lower bridge arms: The phenomenon that the upper and lower power supply devices are connected simultaneously due to the fault caused by noise or the fault caused by the Miller current during the switching process.
    * Company names, product names and service names mentioned herein may be trademarks of their respective companies.
    * Product prices and specifications, service content and contact information in this document are current at the date of announcement, but are subject to change without notice.


About Toshiba Electronic Components and Storage Co., LTD
    Toshiba Electronic Components & Storage Corporation is a leading supplier of advanced semiconductor and storage solutions, with more than half a century of experience and innovation to provide customers and partners with outstanding solutions in discrete semiconductors, system LSI and HDD.
    With 22,200 employees around the world dedicated to maximizing the value of its products, Toshiba Electronic Components & Storage Co., Ltd. places great emphasis on close collaboration with customers to promote value creation and jointly explore new markets. The company now has annual sales of more than 797.1 billion yen (US $4.96 billion). Looking forward to building and contributing to a better future for people around the world.






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