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单P-MOS

PED30P09M PDFN3.3x3.3-8L

    PED30P09M是VDS=-30V,ID=-9A,RDS(ON)<30mΩ@VGS=-10V,RDS(ON)<45mΩ@VGS=-4.5V的P沟道MOSFET。
    PED30P09M的丝印是30P09M,PED30P09M提供PDFN3.3x3.3-8L封装。
    The PED30P09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PED30P09M概述:
        PED30P09M是VDS=-30V,ID=-9A,RDS(ON)<30mΩ@VGS=-10V,RDS(ON)<45mΩ@VGS=-4.5V的P沟道MOSFET。PED30P09M的丝印是30P09M,PED30P09M提供PDFN3.3x3.3-8L封装。
        The PED30P09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PED30P09M特性:
    VDS = -30V, ID = -9A
    RDS(ON) < 30mΩ@ VGS=-10V
    RDS(ON) < 45mΩ@VGS=-4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED30P09M应用:
    PWM applications
    Load switch
    Power management

    PED30P09M典型应用及引脚:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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