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PE8340M是VDS=30V，ID=35A，RDS(ON)<6.5mΩ@VGS=10V，RDS(ON)<12mΩ@VGS=4.5V的N沟道MOSFET。
PE8340M的丝印是PE8340M，PE8340M提供PDFN3.3x3.3-8L封装。

The PE8340M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8340M概述：

PE8340M是VDS=30V，ID=35A，RDS(ON)<6.5mΩ@VGS=10V，RDS(ON)<12mΩ@VGS=4.5V的N沟道MOSFET。PE8340M的丝印是PE8340M，PE8340M提供PDFN3.3x3.3-8L封装。

The PE8340M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8340M特性：

VDS = 30V, ID = 35A

RDS(ON) < 6.5mΩ @ VGS=10V

RDS(ON) < 12mΩ @VGS=4.5V

High Power and current handingcapability

Lead free product is acquired

Surface Mount Package

PE8340M应用：

PWM applications

Load switch

Power management

PE8340M典型应用及引脚：