PE58120G概述：
PE58120G是VDS=85V,ID=90A，RDS(ON)<6mΩ ，@VGS=10V，RDS(ON)<6.5mΩ ，@VGS=8V的N-Channel Enhancement Mode Power MOSFET.PE58120G的丝印是PE58120G.PE58120G提供DFN5x6-8L封装.
The PE58120G uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE58120G特性：
VDS = 85V, ID = 90A
RDS(ON) < 6mΩ @VGS=10V
RDS(ON) < 6.5mΩ @VGS=8V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE58120G应用：
PWM applications
Load switch
Power management
PE58120G典型应用及引脚：
发送邮件
商务QQ客服
13823761625
