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CST50G30F PDFN5060-8L
CST50G30F is N-Ch: BVDS=30V, RDSON=7.5m Ω, ID=45A; P-Ch: N+P dual channel fast switching MOSFETs with BVDS=-30V, RDSON=8.7m Ω, ID=-45A.
Provide PDFN5060-8L package.
Provide PDFN5060-8L package.
CST50G30F Description：
CST50G30F is N-Ch: BVDS=30V, RDSON=7.5m Ω, ID=45A; P-Ch: N+P dual channel fast switching MOSFETs with BVDS=-30V, RDSON=8.7m Ω, ID=-45A. Provide PDFN5060-8L package.
The CST50G30F is th high performance complementary N-ch and P-ch MOSFETs with high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The CST50G30F meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
CST50G30F Features:
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
CST50G30F Product Summary：
BVDSS | RDSON | ID |
30V | 7.5mΩ | 45A |
-30V | 8.7mΩ | -45A |
CST50G30F PDFN5060-8L Pin Configuration：
CST50G30F Test Circuit-N/
CST50G30F Test Circuit-P:
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