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MXN3384 DFN3x3-8L

    Is MXN3384 VDS=20V, ID=6A, @VGS=4.5V, RDS(ON)(Typ.)=12.5m? , @VGS=3.8V, RDS(ON)(Typ.)=13m? , @VGS=2.5V, RDS(ON)(Typ.)=16.5m? Dual N-Channe MOSFET.
    The MXN3384 is available in a DFN3x3-8L package.
    The MXN3384 uses advanced trench technology design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected.

MXN3384 Description:
    Is MXN3384 VDS=20V, ID=6A, @VGS=4.5V, RDS(ON)(Typ.)=12.5m? , @VGS=3.8V, RDS(ON)(Typ.)=13m? , @VGS=2.5V, RDS(ON)(Typ.)=16.5m? Dual N-Channe MOSFET.
    The MXN3384 is available in a DFN3x3-8L package.
    The MXN3384 uses advanced trench technology design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected.

MXN3384 Features:

VDS =20V,ID =6A
@VGS=4.5V RDS(ON)(Typ.)=12.5m?
@VGS=3.8V RDS(ON)(Typ.)=13m?
@VGS=2.5V RDS(ON)(Typ.)=16.5m?
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current

MXN3384 Applications:

Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply

Typical application and pin diagram of MXN3384:

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