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CST2301D-S50 SOT23
The CST2301D-S50 is a P-channel MOSFET with VDS=-20V,ID=-3A,RDS(ON)=95mΩ@VDS=-4.5V,RDS(ON)=110mΩ@VDS=-2.5V.
The CST2301D-S50 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
The CST2301D-S50 meet the RoHS and Green Product requirement with full function reliability approved.
The CST2301D-S50 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
The CST2301D-S50 meet the RoHS and Green Product requirement with full function reliability approved.
CST2301D-S50 Description：
The CST2301D-S50 is a P-channel MOSFET with VDS=-20V,ID=-3A,RDS(ON)=95mΩ@VDS=-4.5V,RDS(ON)=110mΩ@VDS=-2.5V.
The CST2301D-S50 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
The CST2301D-S50 meet the RoHS and Green Product requirement with full function reliability approved.
CST2301D-S50 Features:
VDS=-20V,ID=-3A
RDS(ON)=95mΩ@VDS=-4.5V
RDS(ON)=110mΩ@VDS=-2.5V
Green Device Available
Super Low Gate Charge
Excellent Cdv/dt effect decline
Advanced high cell density Trench technology
CST2301D-S50 package diagram:
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