ChipSourceTek-PE30P60KT is a P-channel enhanced mode power Mosfet designed for high performance and high reliability. With a drain-source voltage of VDS=-30V and a maximum continuous current of ID=-60A, this component is suitable for a wide range of power management and conversion applications. It uses advanced trench technology to achieve low on-resistance RDS(ON) and low gate charge, thus providing excellent electrical performance. et detail
The key parameters of ChipSourceTek-PE30P60KT are as follows:
Drain-source voltage (VDS): -30V,This means that the element can withstand up to 30 volts of reverse voltage and is suitable for use in high-voltage environments.
Maximum continuous current (ID): -60A,The ability to handle sustained currents of up to 60 amps ensures a strong current carrying capacity.
on-resistance RDS(ON):
At VGS=-10V, it's less than 10 milliohms.
At VGS=-4.5V, less than 15 milliohms.
This low on-resistance helps to reduce power consumption and improve system efficiency.
Encapsulation form: It is packaged in TO-252-2L, a surface-mount technology that facilitates automated production while providing good thermal performance.
Lead-free product: It meets the environmental requirements and reduces the impact on the environment.
In addition to the basic parameters, ChipSourceTek-PE30P60KT also has the following advanced features:
High power and current handling capability: It can cope with high load conditions and is suitable for applications requiring high power output.
Low gate charge: Helps reduce switching losses and improve the overall energy efficiency of the system.
Fast switching speed: Although not specifically mentioned in the documentation, advanced groove technology generally means faster switching speeds, which is especially important for high-frequency applications.
Good thermal stability: It can work stably in a wide temperature range to ensure long-term reliability.
Due to its excellent electrical performance and reliability, ChipSourceTek-PE30P60KT can be widely used in the following areas:
Pulse width modulation (PWM) applications: It is used to accurately control signal strength and light brightness in analog circuits.
Load switch: In power management systems, used as an electronic switch to switch between different load states.
To verify the actual performance of the ChipSourceTek-PE30P60KT, the following is a simple switch test circuit design scheme:
Circuit composition: Includes a DC power supply, an inductor, a diode, and a load resistor. The MOSFET is connected as a switching element between the power supply and the inductor.
Working principle: When the MOSFET is on, the current passes through the inductor to generate a magnetic field and store energy. When the MOSFET is turned off, the magnetic field releases energy, which is transferred to the load through the diode.
Test parameter: Measure parameters such as on-resistance, leakage current, and switching speed of MOSFETs under different operating conditions to evaluate their performance.
Matters needing attention: Ensure that the circuit design meets the maximum rated voltage and current requirements of the MOSFET to avoid overload damage to components. At the same time, consider heat dissipation and add heat sinks or other cooling measures if necessary.
ChipSourceTek-PE30P60KT is a P-channel enhanced mode power Mosfet with superior performance and wide application. Its excellent electrical characteristics make it ideal for a variety of high power and high efficiency applications. Whether in consumer electronics or industrial control systems, the device provides a reliable and efficient solution. Through reasonable circuit design and test verification, it can give full play to its potential and achieve the best performance.