The ChipSourceTek-MXD60P110 is a high-performance P-channel enhanced power Mosfet with electrical characteristics of VDS=-60V and ID=-60A. Its RDS(ON) has a typical value of 12mΩ at VGS=-10V and 14.3 mω at VGS=-4.5V, showing the advantage of low on-resistance. The device uses advanced trench technology, excellent RDS(ON), low gate charge, and the ability to operate at gate voltages as low as -4.5V for a variety of applications.

1. Main features

•     Electrical parameters:The main electrical parameters of the ChipSourceTek-MXD60P110 include a maximum drain-source voltage VDS of -60V and a maximum continuous drain current ID of -60A. These parameters determine its reliability and stability in high voltage and high current applications.

•     Package form:This Mosfet is in TO-252 package, a common form of plastic package, which has the advantages of small size, light weight and easy integration, and is widely used in various electronic devices. The TO-252 package is designed TO help improve the thermal performance and mechanical strength of the components, ensuring stable operation in a variety of environments.

•    Low on-resistance:The ChipSourceTek-MXD60P110's low on-resistance makes it ideal for high frequency switching applications. When VGS=-10V, the typical value of RDS(ON) is 12mΩ. For VGS=-4.5V, the typical RDS(ON) value is 14.3mΩ. This feature not only reduces power consumption, but also improves the system's energy efficiency and thermal management capabilities.

2. Application field

    ChipSourceTek-MXD60P110 is widely used in many fields due to its excellent electrical characteristics and reliability:

•    Load switch:When used as a load switch, the MXD60P110 can efficiently control the connection and disconnection between the power supply and the load. Its high current carrying capacity and low on-resistance allow the equipment to consume less energy and generate less heat during switching operation.

•     Power Management:In power management systems, the MXD60P110 can be used in circuits such as DC-DC converters, inverters and inverters to provide efficient power conversion and management. Its low gate charge characteristics help reduce switching losses and improve the overall efficiency of the system.

3. Test circuit and waveform

    To evaluate the performance of the ChipSourceTek-MXD60P110, the following key tests are typically performed:

•      EAS Test circuit:This is a standard test to assess the antistatic ability of equipment. By simulating electrostatic discharge events, the device's withstand capability under different electrostatic voltages is tested. The MXD60P110 is designed with antistatic protection in mind to ensure stable operation in harsh environments.

•     Grid charge test circuit:Gate charge (Qg) is an important parameter to measure the switching speed of MOSFET. By measuring gate charge and discharge times, the switching performance of the device can be evaluated. The low gate charge characteristic of the MXD60P110 makes it excellent for high frequency applications.

•     Switching time test circuit:Switching time refers to the time required for the MOSFET to transition from the cut-off state to the on-state. Fast switching times help reduce switching losses and improve system efficiency. The optimized design of the MXD60P110 ensures a fast switching response.

    ChipSourceTek-MXD60P110 is a high-performance P-channel enhanced power Mosfet with wide application prospects. Its excellent electrical characteristics, reliable packaging and diverse application areas make it an ideal choice for electronic designers when developing high-performance and high-reliability electronic products. Whether in load switching, power management or other applications requiring efficient power control, the MXD60P110 delivers superior performance.